applications ? lna or gain stage for pcs, ism, cellular, and gps applications description agilents mga-87563 is an economical, easy-to-use gaas mmic amplifier that offers low noise and excellent gain for applications from 0.5 to 4 ghz. packaged in an ultra-miniature sot-363 package, it requires half the board space of a sot-143 package. with the addition of a simple shunt-series inductor at the input, the device is easily matched to achieve a noise of 1.6 db at 2.4 ghz. for 2.4 ghz applications and above, the output is well matched to 50 ohms. below 2 ghz, gain can be increased by using conjugate matching. the circuit uses state-of-the-art phemt technology with self- biasing current sources, a source- follower interstage, resistive feedback, and on-chip impedance matching networks. a patented, on-chip active bias circuit allows operation from a single +3 v or +5 v power supply. current consumption is only 4.5 ma, making this part ideal for battery powered designs. 0.5 C 4 ghz 3 v low current gaas mmic lna technical data mga-87563 features ? lead-free option available ? ultra-miniature package ? 1.6 db min. noise figure at 2.4 ghz ? 12.5 db gain at 2.4 ghz ? single +3 v or 5 v supply, 4.5 ma current pin connections and package marking surface mount sot-363 (sc-70) package mga-87563 pkg note: package marking provides orientation and identification. equivalent circuit output gnd v dd 87 gnd gnd input 1 2 3 6 5 4 rf input v dd rf output ground 3 1, 2, 5 4 6 attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to agilent application note a004r: electrostatic discharge damage and control.
2 thermal resistance [2] : ch-c = 160 c/w notes: 1. operation of this device above any one of these limits may cause permanent damage. 2. t c = 25 c (t c is defined to be the temperature at the package pins where contact is made to the circuit board). absolute maximum ratings absolute symbol parameter units maximum [1] v dd device voltage, rf v 6 output to ground v in rf input or rf output v +0.5 v out voltage to ground C1.0 p in cw rf input power dbm +13 t ch channel temperature c 150 t stg storage temperature c -65 to 150 mga-87563 electrical specifications [3] , t c = 25 c, z o = 50 ? , v dd = 3 v symbol parameters and test conditions units min. typ. max. g test [3] f = 2.0 ghz 11 14 nf test [3] f = 2.0 ghz 1.8 2.3 nf o optimum noise figure f = 0.9 ghz db 1.9 (tuned for lowest noise figure) f = 1.5 ghz 1.6 f = 2.0 ghz 1.6 f = 2.4 ghz 1.6 f = 4.0 ghz 2.0 g a associated gain at nf o f = 0.9 ghz db 14.6 (tuned for lowest noise figure) f = 1.5 ghz 14.5 f = 2.0 ghz 14.0 f = 2.4 ghz 12.5 f = 4.0 ghz 10.3 p 1db output power at 1 db gain compression f = 0.9 ghz dbm -2.0 f = 1.5 ghz -1.8 f = 2.0 ghz -2.0 f = 2.4 ghz -2.0 f = 4.0 ghz -2.6 ip 3 third order intercept point f = 2.4 ghz dbm +8 vswr output vswr f = 2.4 ghz 1.8 i dd device current ma 4.5 note: 3. guaranteed specifications are 100% tested in the circuit in figure 10 in the applications information section.
3 figure 7. input and output vswr (into 50 ? ) vs. frequency. figure 8. 50 ? noise figure and associated gain vs. frequency. figure 9. device current vs. voltage. figure 1. minimum noise figure (optimum tuning) vs. frequency and temperature. figure 2. associated gain (optimum tuning) vs. frequency and temperature. figure 4. minimum noise figure (optimum tuning) vs. frequency and voltage. mga-87563 typical performance, t c = 25 c, v dd = 3 v noise figure (db) 0.5 0 frequency (ghz) 2.0 5 2 1 4.0 4 3.0 1.0 1.5 2.5 3.5 2.7 v 3.0 v 3.3 v 3 figure 5. associated gain (optimum tuning) vs. frequency and voltage. figure 6. output power for 1 db gain compression (into 50 ? ) vs. frequency and voltage. figure 3. output power for 1 db gain compression (into 50 ? ) vs. frequency and temperature. noise figure (db) 0.5 0 frequency (ghz) 2.0 5 2 1 4.0 4 3.0 1.0 +25 3 1.5 2.5 3.5 +85 -40 associated gain (db) 0.5 0 frequency (ghz) 2.0 20 5 4.0 15 3.0 1.5 +25 +85 10 -40 1.0 2.5 3.5 p 1 db (dbm) 0.5 -5 frequency (ghz) 2.0 0 -3 -4 4.0 -1 3.0 1.0 1.5 2.5 3.5 +85 +25 -40 -2 associated gain (db) 0.5 0 frequency (ghz) 2.0 20 5 4.0 15 3.0 1.5 3.0 v 2.7 v 10 3.3 v 1.0 2.5 3.5 p 1db (dbm) 0.5 -5 frequency (ghz) 2.0 0 -4 4.0 -2 3.0 1.5 3.0 v 2.7 v -3 3.3 v -1 1.0 2.5 3.5 vswr (n:1) 0.5 1.0 frequency (ghz) 3.0 4.0 1.5 3.0 4.0 1.0 2.5 3.5 2.0 2.0 input output 1.5 3.5 2.5 noise figure (db) 0.5 1.0 frequency (ghz) 3.0 5.0 1.5 4.0 3.5 1.5 3.0 4.5 2.5 2.0 associated gain (db) 4.0 2.0 0 20 10 15 5 ga 50 nf 50 nf opt 1.0 2.5 3.5 current (ma) 0 0 voltage (v) 3 6 1 5 4 4 1 3 5 2 2 +85 +50 +25 0 -40
4 mga-87563 typical noise parameters [4] , t c = 25 c, z o = 50 ? , v dd = 3 v frequency nf o (ghz) (db) mag. ang. r n /50 ? 0.5 2.6 0.71 1 1.57 1.0 1.7 0.68 17 0.96 1.5 1.6 0.68 28 0.75 2.0 1.6 0.66 36 0.67 2.5 1.6 0.63 42 0.56 3.0 1.6 0.59 49 0.53 3.5 1.8 0.56 55 0.55 4.0 2.0 0.53 62 0.58 notes: 4. reference plane per figure 11 in applications information section. mga-87563 typical scattering parameters [4] , t c = 25 c, z o = 50 ? , v dd = 3 v freq. s 11 s 21 s 12 s 22 k ghz mag ang db mag ang db mag ang mag ang factor 0.1 0.92 -5 -5.6 0.53 -90 -22.7 0.073 -7 0.86 -11 0.41 0.2 0.91 -8 -0.7 0.92 -100 -22.7 0.073 -9 0.85 -18 0.29 0.5 0.88 -20 6.7 2.15 -131 -23.4 0.068 -18 0.78 -43 0.33 1.0 0.79 -35 10.1 3.22 -170 -25.2 0.055 -26 0.61 -75 0.72 1.5 0.73 -49 11.2 3.63 163 -26.2 0.049 -33 0.50 -100 1.02 2.0 0.67 -60 11.4 3.72 140 -26.6 0.047 -39 0.42 -122 1.32 2.5 0.59 -69 11.0 3.54 119 -29.1 0.035 -40 0.31 -141 2.38 3.0 0.50 -78 10.7 3.41 101 -32.5 0.024 -52 0.25 -167 4.29 3.5 0.43 -83 10.1 3.20 85 -35.1 0.018 -12 0.20 172 6.74 4.0 0.37 -96 10.0 3.16 71 -37.7 0.013 -10 0.24 143 9.83 4.5 0.31 -91 8.7 2.72 52 -26.1 0.050 20 0.11 123 3.33 5.0 0.30 -105 8.1 2.55 42 -25.9 0.050 -3 0.17 127 3.48 opt
5 mga-87563 applications information introduction the mga-87563 low noise rf amplifier is designed to simplify wireless rf applications in the 0.5 to 4 ghz frequency range. the mga-87563 is a two-stage, gaas microwave monolithic integrated circuit (mmic) amplifier that uses feedback to provide wideband gain. the output is matched to 50 ? and the input is partially matched for optimum noise figure. a patented, active bias circuit makes use of current sources to re-use the drain current in both stages of gain, thus minimizing the required supply current and decreasing sensitivity to varia- tions in power supply voltage. test circuit the circuit shown in figure 10 is used for 100% rf testing of noise figure and gain. the input of this circuit is fixed tuned for a conjugate power match (maxi- mum power transfer, or, mini- mum input vswr) at 2 ghz. tests in this circuit are used to guarantee the nf test and g test parameters shown in the electrical specifications table. the 4.7 nh inductor, l1 (coilcraft, cary, il part number series 1008ct-040) placed in series with the input of the amplifier is all that is necessary to match the input to 50 ? at 2 ghz. phase reference planes the positions of the reference planes used to measure s-parameters and to specify opt for the noise parameters are shown in figure 11. as seen in the illustration, the reference planes are located at the extremities of the package leads. biasing the mga-87563 is a voltage- biased device and operates from a single +3 volt power supply. with a typical current drain of only 4.5 ma, the mga-87563 is very well suited for use in battery powered applications. all bias regulation circuitry is integrated into the mmic, eliminating the need for external dc compo- nents. rf performance is very consistent for 3-volt battery supplies that may range from 2.7 to 3.3 volts, depending on battery freshness or state of charge for rechargeable batteries. operation up to +5 volts is discussed at the end of the applications section. the test circuit in figure 10 illustrates a suitable method for bringing bias into the mga-87563. the bias connection must be designed so that it adequately bypasses the v dd terminal while not inadvertently creating any resonances at frequencies where the mga-87563 has gain. the 10 ? resistor, r1, serves to de-q any potential resonances in the bias line that could lead to low gain, unwanted gain varia- tions or device instability. the power supply end of r1 is bypassed to ground with capacitor c1. the suggested value for c1 is 100 pf. significantly higher values for c1 are not recommended. many higher value chip capacitors (e.g., 1000 pf) are not of sufficiently high quality at these frequencies to function well as a rf bypass without adding harmful parasitics or self- resonances. while the input and output terminals are internally resistively grounded, these pins should not be considered to be current sinks. connection of the mga-87563 amplifier to circuits that are at ground potential may be made without the additional cost and pcb space needed for dc block- ing capacitors. if the amplifier is to be cascaded with active circuits having non-zero voltages present, the use of series blocking capacitors is recommended. input matching the input of the mga-87563 is partially matched internally to 50 ? . the use of a simple input conjugate matching circuit (such as shown in figure 10 for 2 ghz), will lower the noise figure considerably. a significant advan- tage of the mga-87563s design is that the impedance match for nf o (minimum noise figure) is very close to a conjugate power match. this means that a very low noise figure can be realized simultaneously with a low input vswr. the typical difference figure 10. test circuit for 2 ghz. figure 11. reference planes. reference planes test circuit v dd c1 l1 4.7 nh 50 ? rf input rf output 50 ? 10 ?
6 rf layout the rf layout in figure 14 is suggested as a starting point for designs using the mga-87563 amplifier. adequate grounding is needed to obtain maximum per- formance and to obviate potential instability. all three ground pins of the mmic should be connected to rf ground by using plated through holes (vias) near the package terminals. it is recommended that the pcb traces for the ground pins not be connected together underneath the body of the package. pcb pads hidden under the package cannot be adequately inspected for smt solder quality. fr-4 or g-10 pcb material is a good choice for most low cost wireless applications. typical board thickness is 0.025 or 0.031 inches. the width of 50 ? microstriplines in these pcb thicknesses is also convenient for mounting chip components such as the series inductor at the input for impedance matching or for dc blocking capacitors. for noise figure sensitive applications, the use of ptfe/glass dielectric materials may be warranted to minimize transmission line losses at the amplifier input. higher bias voltages while the mga-87563 is designed for use in +3 volt battery powered applications, the internal bias regulation circuitry allows it to be between the noise figure obtain- able with a conjugate power match at the input and nf o is only about 0.2 db. output matching the output of the mga-87563 is matched internally to 50 ? above 1.8 ghz. the use of a conjugate matching circuit, such as a simple series inductor, can increase the gain considerably at lower frequencies. matching the output will not affect the noise figure. stability if the mga-87563 is cascaded with highly reactive stages (such as filters) some precautions may be needed to ensure stability. the low frequency stability (under 1.5 ghz) of the mga-87563 can be enhanced by adding a series r-l network in shunt with the output, as shown in figure 12. the inductor can be either a chip component or a high impedance transmission line as shown in the figure. component values are selected such that the output of the mga-87563 will be resistively loaded at low frequen cies while allowing high frequency signals to pass the stability load with minimal loss. typical values for the resistor are in the 25 to 50 ? range. a suggested starting place for the inductor is a 0.35 to 0.40-inch long microstripline with a width of 0.020 inches, using 0.031-inch thick fr-4 ( r = 4.8) circuit board as the substrate. for applications near 1.5 ghz, gain (and output power) may be traded off for increased stability. some precautions regarding the v dd connection of the mga-87563 are also recommended to ensure stability within the operating frequency range of the device. it is important that the connection to the power supply be properly bypassed to realize full amplifier performance. refer to the biasing section above for more information. sot-363 pcb layout a pcb pad layout for the minia- ture sot-363 (sc-70) package is shown in figure 13 (dimensions are in inches). this layout provides ample allowance for package placement by automated assem- bly equipment without adding parasitics that could impair the high frequency rf performance of the mga-87563. the layout is shown with a nominal sot-363 package footprint superimposed on the pcb pads. figure 12. output circuitry for low frequency stability. figure 13. recommended pcb pad layout for agilents sc70 6l/sot-363 products. mga 87563 rf output 25-50 ? high impedance transmission or inductor dc blocking capacitor figure 14. rf layout. rf output v dd rf input 50 ? 50 ? 87 0.026 0.079 0.018 0.039 dimensions in inches.
7 easily operated with any power supply voltage from +2.7 to 5 volts. figure 15 shows an increase of approximately 1 db in the associated gain with +5 volts applied. the p 1db output power (figure 17) is also higher by about 1 dbm. the effect of higher v dd on noise figure is negligible as indicated in figure 16. figure 15. associated gain vs. frequency at v dd = 5 volts. figure 16. optimum noise figure vs. frequency at v dd = 5 volts. figure 17. output power at 1 db gain compression vs. frequency at v dd = 5 volts. p 1 db (dbm) 0.6 -2.00 frequency (ghz) 0.00 -1.50 2.4 1.2 -1.00 -0.50 1.8 3.0 3.6 4.2 optimum nf (db) 0.5 0.5 frequency (ghz) 2.0 3.5 1.0 4.0 2.5 2.5 1.0 2.0 3.0 1.5 3.0 3.5 1.5 associated gain (db) 0.5 9 frequency (ghz) 2.0 17 10 4.0 14 2.5 1.0 13 16 12 1.5 3.0 3.5 15 11 package dimensions outline 63 (sot-363/sc-70) part number ordering information no. of part number devices container mga-87563-tr1 3000 7" reel mga-87563-tr2 10000 13" reel mga-87563-blk 100 antistatic bag mga-87563-tr1g 3000 7" reel mga-87563-tr2g 10000 13" reel mga-87563-blkg 100 antistatic bag note: for lead-free option, the part number will have the character g at the end. e he d e a1 b a a2 q1 l c dimensions (mm) min. 1.15 1.80 1.80 0.80 0.80 0.00 0.10 0.15 0.10 0.10 max. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.30 0.20 0.30 symbol e d he a a2 a1 q1 e b c l notes: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash & metal burr. 4. all specifications comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. package surface to be mirror finish. 0.650 bcs
tape dimensions and product orientation for outline 63 device orientation p p 0 p 2 f w c d 1 d e a 0 10 max. t 1 (carrier tape thickness) t t (cover tape thickness) 10 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.10 4.00 0.10 1.75 0.10 0.061 + 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.205 + 0.004 0.0025 0.0004 cover tape user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 87 87 87 87 for product information and a complete list of agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors e-mail: semiconductorsupport@agilent.com data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5965-9688e november 16, 2004 5989-1803en
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